Interfacial p-Si doped InZnO ferroelectric FET for enhanced memory window

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0288831
Affiliations:
2
Authors:
5
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Institutions Authors Share
Kyungpook National University (KNU), South Korea
4.000000
 0.80
Gumi Electronics and Information Technology Research Institute (GERI), South Korea
1.000000
 0.20
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