Electron trapping/detrapping at oxygen vacancies and imprint evolution in La-doped Hf0.5Zr0.5O2 ferroelectric capacitors probed by hard x-ray photoelectron spectroscopy

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0288835
Affiliations:
7
Authors:
9
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Institutions Authors Share
NaMLab, Germany
3.000000
 0.33
Service de Physique de l’État Condensé (SPEC), France
2.000000
 0.22
Research Center for Electronic and Optical Materials, NIMS, Japan
1.500000
 0.17
Center for Nanosciences and Nanotechnologies (C2N), France
1.000000
 0.11
NIMS Synchrotron X-ray Station at SPring-8, Japan
0.500000
 0.06
Grenoble Alpes University (UGA), France
0.500000
 0.06
CEA Laboratory of Electronics and Information Technology (LETI), France
0.500000
 0.06
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