Diffusing the photon-assisted regenerated holes to increase the WPE for 259 nm AlGaN-based DUV LEDs with three-dimensional n-ZnO/p-AlGaN photon-sensitive micro-structure arrays

Journal:

Applied Physics Letters

Published:

2025-10-20

DOI:

10.1063/5.0289146

Affiliations:

3

Authors:

8

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Institutions	Authors	Share
State Key Laboratory of Reliability and Intelligence of Electrical Equipment, HEBUT, China	3.500000	0.44
Guangdong University of Technology (GDUT), China	2.500000	0.31
Institute of Semiconductors (IOS), CAS, China	2.000000	0.25

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