Selective area regrowth of silane-doped GaN achieving record carrier density for ultra-low resistive Ohmic contacts for AlGaN/GaN HEM

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0289411
Affiliations:
1
Authors:
6
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Institutions Authors Share
University of Wisconsin-Madison (UW-Madison), United States of America (USA)
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