Origin of ferroelectricity and anti-ferroelectricity via doping and oxygen vacancy effects in lanthanum-doped hafnium zirconium oxide thin films

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0289456
Affiliations:
2
Authors:
7
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Institutions Authors Share
Xiamen University (XMU), China
6.000000
 0.86
National Taipei University of Technology (NTUT), Taiwan
1.000000
 0.14
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