Defect evolution in proton-irradiated 4H-SiC

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0289493
Affiliations:
5
Authors:
5
Institutions Authors Share
Zhejiang University (ZJU), China
1.900000
0.38
ZJU-Hangzhou Global Scientific and Technological Innovation Center, China
1.700000
0.34
State Key Laboratory of Silicon and Advanced Semiconductor Materials, ZJU, China
1.200000
0.24
Shangyu Institute of Semiconductor Materials, China
0.200000
0.04