Impact of gate voltage on switching field of perpendicular magnetic tunnel junctions with a synthetic antiferromagnetic free layer

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0289550
Affiliations:
4
Authors:
14
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Institutions Authors Share
Interuniversity Microelectronics Centre (IMEC), Belgium
11.333333
11.333333
 0.81
Catholic University of Leuven (KU Leuven), Belgium
2.333333
 0.17
University of Antwerp (UA), Belgium
0.333333
 0.02
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