Wide-bandgap Ga2O3 single crystal-based heterojunctions with organic interlayers for high-performance x-ray detection

Journal:

Applied Physics Letters

Published:

2025-12-01

DOI:

10.1063/5.0289681

Affiliations:

6

Authors:

5

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Institutions	Authors	Share
MOE Key Laboratory of Artificial Micro- and Nano-structures, WHU, China	2.250000	0.45
Shanghai Institute of Optics and Fine Mechanics (SIOM), CAS, China	1.000000	0.20
Shanghai Key Laboratory of Wide and Ultra-Wide Bandgap Semiconductor Materials, China	1.000000	0.20
Henan Academy of Sciences, China	0.250000	0.05
Micius Laboratory, China	0.250000	0.05
Wuhan University (WHU), China	0.250000	0.05

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