Transient extension process of the off-state depletion region in GaN HEMTs with SiO2 passivation

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0290603
Affiliations:
2
Authors:
10
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Institutions Authors Share
Peking University (PKU), China
9.000000
 0.90
MIIT Fifth Electronics Research Institute (China CEPREI Laboratory), China
1.000000
 0.10
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