Development of the self-aligned top-gate MoS2 transistor with the recorded radiation tolerance

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0290712
Affiliations:
3
Authors:
7
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Institutions Authors Share
Nanjing University (NJU), China
5.000000
 0.71
Institute of Microelectronics (IME), CAS, China
2.000000
 0.29
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