Transition metal oxide-based heterostructure memristors for nonvolatile ternary resistive switching realization

Journal:

Applied Physics Letters

Published:

2025-12-15

DOI:

10.1063/5.0290920

Affiliations:

4

Authors:

12

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Institutions	Authors	Share
Shaanxi University of Science and Technology (SUST), China	7.000000	0.58
Wuhan University (WHU), China	3.000000	0.25
Shaanxi Normal University (SNNU), China	1.000000	0.08
MOE Key Laboratory of Flexible Optoelectronic Materials and Technology, Jianghan University, China	1.000000	0.08

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