Optimal growth conditions for strained GaAs/InxAl1−xAs core–shell nanowires with enhanced electronic properties

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0291048
Affiliations:
3
Authors:
10
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Institutions Authors Share
Institute of Ion Beam Physics and Materials Research, HZDR, Germany
8.500000
 0.85
TU Dresden, Germany
1.000000
 0.10
Peking University Shenzhen Graduate School (PKUSZ), China
0.500000
 0.05
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