Tuning the interfacial properties of stacked gate dielectrics on silicon carbide by inserting h-BN layer

Journal:

Applied Physics Letters

Published:

2025-10-13

DOI:

10.1063/5.0291161

Affiliations:

4

Authors:

13

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Institutions	Authors	Share
University of Chinese Academy of Sciences (UCAS), China	4.500000	0.35
College of Physical Science and Technology, XMU, China	4.000000	0.31
Institute of Semiconductors (IOS), CAS, China	3.000000	0.23
State Key Laboratory of Semiconductor Physics and Chip Technologies, IOS CAS, China	1.500000	0.12

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