Low-temperature high-quality epitaxial AlN films deposited by plasma-enhanced atomic layer deposition

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0291492
Affiliations:
3
Authors:
5
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Institutions Authors Share
Ariel University (AU), Israel
2.000000
 0.40
Bar-Ilan University (BIU), Israel
2.000000
 0.40
Technion-Israel Institute of Technology (IIT), Israel
1.000000
 0.20
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