Low turn-on and surge-robust β-Ga2O3 heterojunction barrier Schottky diodes enabled by conductivity modulation

Journal:

Applied Physics Letters

Published:

2026-01-26

DOI:

10.1063/5.0291577

Affiliations:

3

Authors:

13

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Institutions	Authors	Share
State Key Laboratory of Optoelectronic Materials and Technologies (OEMT), SYSU, China	10.000000 10.000000	0.77
South China University of Technology (SCUT), China	2.000000	0.15
Shenzhen Institute of Information Technology, China	1.000000	0.08

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