Single-event burnout in β-Ga2O3 Schottky barrier diode induced by heavy ion irradiation

Journal:

Applied Physics Letters

Published:

2025-09-22

DOI:

10.1063/5.0291799

Affiliations:

5

Authors:

11

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Institutions	Authors	Share
MIIT Fifth Electronics Research Institute (China CEPREI Laboratory), China	7.000000	0.64
Xidian University, China	1.000000	0.09
Hebei Semiconductor Research Institute (CETC13), China	1.000000	0.09
Shandong University (SDU), China	1.000000	0.09
Xinjiang Technical Institute of Physics and Chemistry (XTIPC), CAS, China	1.000000	0.09

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