Quantification and improvement of doping uniformity on CVD grown 4H-SiC superjunction structures

Journal:

Applied Physics Letters

Published:

2025-12-01

DOI:

10.1063/5.0291840

Affiliations:

1

Authors:

5

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Institutions	Authors	Share
National Institute of Advanced Industrial Science and Technology (AIST), Japan	5.000000	1.00

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