Effects of high-temperature annealing on electrical properties of Si-doped β-Ga2O3 thin films grown by low-pressure hot-wall MOCVD

Journal:

Applied Physics Letters

Published:

2025-10-06

DOI:

10.1063/5.0292471

Affiliations:

4

Authors:

5

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Institutions	Authors	Share
Osaka Metropolitan University (OMU), Japan	2.500000	0.50
Tokyo University of Agriculture and Technology (TUAT), Japan	1.500000	0.30
Taiyo Nippon Sanso Corporation, Japan	0.500000	0.10
National Institute of Information and Communications Technology (NICT), Japan	0.500000	0.10

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