Low-loss GaN monolithic bidirectional switch via antiparallel connected HEMTs with recessed Schottky drain

Journal:

Applied Physics Letters

Published:

2025-10-20

DOI:

10.1063/5.0292563

Affiliations:

2

Authors:

9

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Institutions	Authors	Share
ShanghaiTech University, China	7.000000	0.78
Donghua University (DHU), China	2.000000	0.22

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