High-performance β-Ga2O3 vertical diodes integrating metal-interlayer-semiconductor architecture and mesa termination

Journal:

Applied Physics Letters

Published:

2025-12-08

DOI:

10.1063/5.0293221

Affiliations:

4

Authors:

7

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Institutions	Authors	Share
National Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Xidian University, China	3.500000	0.50
King Abdulaziz University (KAU), Saudi Arabia	2.000000	0.29
Xidian University, China	1.500000	0.21

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