First observations of avalanche-like behavior in p-GaN gate HEMTs with the buffer avalanche triggered layer
- Journal:
- Applied Physics Letters
- Published:
- DOI:
- 10.1063/5.0293431
- Affiliations:
- 2
- Authors:
- 11
| Institutions | Authors | Share |
|---|---|---|
| State Key Laboratory of Electronic Thin Films and Integrated Devices, UESTC, China | 0.73 | |
| CAS Songshan Lake Materials Laboratory, China | 0.27 |