Impact of interlayer on gate leakage during endurance fatigue of Si-channel FeFETs

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0293794
Affiliations:
4
Authors:
14
Go to article
Institutions Authors Share
University of Chinese Academy of Sciences (UCAS), China
6.666667
 0.48
Institute of Microelectronics (IME), CAS, China
6.333333
 0.45
Weifang University, China
1.000000
 0.07
Interested in Macromolecular and Materials Chemistry?