Strain-induced polarization of AlN/GaN heterointerfaces enabling ultra-high 2DEG densities

Journal:

Applied Physics Letters

Published:

2025-12-15

DOI:

10.1063/5.0294027

Affiliations:

1

Authors:

5

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Institutions	Authors	Share
University of Michigan (U-M), United States of America (USA)	5.000000	1.00

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