Enhanced transport properties in GaN heterostructures with sputter-epitaxy-grown ScAlN barriers via thermal annealing

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0294172
Affiliations:
5
Authors:
14
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Institutions Authors Share
The University of Tokyo (UTokyo), Japan
6.500000
 0.46
Tokyo University of Science (TUS), Japan
4.000000
 0.29
Sumitomo Electric, Japan
3.000000
 0.21
Japan Fine Ceramics Center (JFCC), Japan
0.500000
 0.04
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