Formation mechanisms of low-density C-related defects in homoepitaxy 3C-SiC MOS capacitors compared with 4H-SiC

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0294332
Affiliations:
4
Authors:
14
Go to article
Institutions Authors Share
Institute of Microelectronics (IME), CAS, China
8.500000
 0.61
PowerEpi Semiconductor, China
4.000000
 0.29
Lattice Semiconductor, China
1.000000
 0.07
University of Chinese Academy of Sciences (UCAS), China
0.500000
 0.04
Interested in Macromolecular and Materials Chemistry?