Formation and relief of epitaxial strain in ultra-thin α-(Al,Ga)2O3 films on a-plane sapphire under biaxial stress
- Journal:
- Applied Physics Letters
- Published:
- DOI:
- 10.1063/5.0294624
- Affiliations:
- 2
- Authors:
- 3
| Institutions | Authors | Share |
|---|---|---|
| Paul Drude Institute for Solid State Electronics (PDI), Germany | 0.50 | |
| Leibniz-Institut für Kristallzüchtung im Forschungsverbund Berlin e.V. (IKZ), Germany | 0.50 |