Optimal layer thickness and junction temperature of GaN HEMTs based on bias-dependent non-uniform heat source model

Journal:

Applied Physics Letters

Published:

2025-11-03

DOI:

10.1063/5.0295152

Affiliations:

2

Authors:

8

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Institutions	Authors	Share
Changsha University of Science and Technology (CSUST), China	7.000000	0.88
Hunan Institute of Technology (HNIT), China	1.000000	0.13

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