UV light-induced graphene/GaN heterojunction photomemory devices with negative photocurrent

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0295334
Affiliations:
2
Authors:
4
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Institutions Authors Share
Nanyang Technological University (NTU), Singapore
3.000000
 0.75
University of Seoul (UOS), South Korea
1.000000
 0.25
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