Single-event burnout mechanism in β-Ga2O3 Schottky barrier diodes

Journal:

Applied Physics Letters

Published:

2025-11-03

DOI:

10.1063/5.0295377

Affiliations:

3

Authors:

13

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Institutions	Authors	Share
National Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Xidian University, China	9.000000	0.69
China Aerospace Science and Technology Corporation (CASC), China	3.000000	0.23
Beihang University (BUAA), China	1.000000	0.08

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