Negative bias temperature stress-induced threshold voltage instability and mobility degradation in SiC PMOS devices

Journal:

Applied Physics Letters

Published:

2025-12-08

DOI:

10.1063/5.0296031

Affiliations:

3

Authors:

6

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Institutions	Authors	Share
Zhejiang University (ZJU), China	3.000000	0.50
ZJU-Hangzhou Global Scientific and Technological Innovation Center, China	2.000000	0.33
Hangzhou Silicon-Magic Semiconductor Technology Co.,Ltd., China	1.000000	0.17

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