Over 50% carrier injection efficiency in AlGaN-based UV-B laser diodes enabled by combining Al-content-drop design and low-temperature epitaxy

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0297172
Affiliations:
3
Authors:
15
Go to article
Institutions Authors Share
Meijo University, Japan
13.000000
13.000000
 0.87
Mie University, Japan
1.000000
 0.07
Ushio, Japan
1.000000
 0.07
Interested in Atomic, Molecular and Optical Physics?