High-performance Ku-band thin-barrier AlGaN/GaN MIS-HEMTs on Si using high-stress LPCVD-SiN passivation for low-voltage applications

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0297174
Affiliations:
2
Authors:
15
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Institutions Authors Share
Xidian University, China
12.000000
12.000000
 0.80
Institute of Microelectronics (IME), CAS, China
3.000000
 0.20
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