Enhanced breakdown voltage in β-Ga2O3 Schottky diodes via fast neutron irradiation and electro-thermal annealing

Journal:

Applied Physics Letters

Published:

2025-12-15

DOI:

10.1063/5.0297242

Affiliations:

2

Authors:

9

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Institutions	Authors	Share
University at Buffalo, The State University of New York (SUNY UB), United States of America (USA)	5.000000	0.56
University of Massachusetts Lowell (UMass Lowell), United States of America (USA)	4.000000	0.44

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