Low p-contact resistance InGaN-capped AlGaN-based DUV LEDs on bulk AlN substrates

Journal:: Applied Physics Letters
Published:: 2025-11-10
DOI:: 10.1063/5.0297626
Affiliations:: 4
Authors:: 6

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Institutions	Authors	Share
Cornell University, United States of America (USA)	5.333333	0.89
Kavli Institute at Cornell for Nanoscale Science, United States of America (USA)	0.666667	0.11

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