The mechanism of single-event burnout in NiO/β-Ga2O3 heterojunction diodes under atmospheric neutron irradiation

Journal:

Applied Physics Letters

Published:

2026-01-12

DOI:

10.1063/5.0297946

Affiliations:

3

Authors:

13

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Institutions	Authors	Share
MIIT Fifth Electronics Research Institute (China CEPREI Laboratory), China	8.500000	0.65
State Key Laboratory of Optoelectronic Materials and Technologies (OEMT), SYSU, China	3.500000	0.27
Xi'an Jiaotong University (XJTU), China	1.000000	0.08

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