Defect engineering via BiMnO3 doping in AgNbO3: Achieving high energy storage density under moderate electric fields

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0298160
Affiliations:
3
Authors:
9
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Institutions Authors Share
Henan Normal University, China
6.500000
 0.72
Henan Institute of Technology (HAIT), China
1.500000
 0.17
Zhengzhou University of Light Industry (ZZULI), China
1.000000
 0.11
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