Optimization of electric field distribution for AlGaN/GaN MIS-HEMT with thick i-GaN cap layer

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0299082
Affiliations:
3
Authors:
6
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Institutions Authors Share
Southern University of Science and Technology (SUSTech), China
3.500000
 0.58
Fudan University, China
2.000000
 0.33
Shenzhen Polytechnic University (SZPU), China
0.500000
 0.08
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