Processing and characterization of N-polar GaN/AlGaN HFETs grown on 200 mm sapphire substrates

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0299401
Affiliations:
3
Authors:
10
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Institutions Authors Share
RWTH Aachen University (RWTH Aachen), Germany
7.500000
 0.75
Aixtron SE, Germany
2.500000
 0.25
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