High-performance annealing-free InGaZnOx thin film transistors by thermal ALD

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0299768
Affiliations:
5
Authors:
13
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Institutions Authors Share
Seoul National University (SNU), South Korea
9.000000
 0.69
Samsung Electronics Co., Ltd., South Korea
3.000000
 0.23
Korea University, South Korea
1.000000
 0.08
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