Cryogenic performance of field-effect transistors and amplifiers based on selective area grown InAs nanowires

Journal:

Applied Physics Letters

Published:

2025-11-10

DOI:

10.1063/5.0299908

Affiliations:

5

Authors:

9

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Institutions	Authors	Share
Technical University of Denmark (DTU), Denmark	6.500000	0.72
Catalan Institute of Nanoscience and Nanotechnology (ICN2), BIST, Spain	0.833333	0.09
Spanish National Research Council (CSIC), Spain	0.833333	0.09
University of Copenhagen (UCPH), Denmark	0.500000	0.06
Catalan Institution for Research and Advanced Studies (ICREA), Spain	0.333333	0.04

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