Thermal and microwave performance enhancement of AlGaN/GaN HEMT using an ultra-thin buffer on Si substrate for handset applications
- Journal:
- Applied Physics Letters
- Published:
- DOI:
- 10.1063/5.0300018
- Affiliations:
- 4
- Authors:
- 11
| Institutions | Authors | Share |
|---|---|---|
| Dynax Semiconductor Inc., China | 0.45 | |
| Xiaomi, China | 0.18 | |
| Xi'an Jiaotong - Liverpool University (XJTLU), China | 0.18 | |
| College of Engineering and Applied Sciences (CEAS), NJU, China | 0.18 |