GaN HEMT with improved electrical performance enabled by hybrid AlN nucleation layers

Journal:

Applied Physics Letters

Published:

2026-03-02

DOI:

10.1063/5.0300073

Affiliations:

5

Authors:

12

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Institutions	Authors	Share
Institute of Materials Technology, CNITECH CAS, China	6.000000	0.50
University of Science and Technology of China (USTC), China	3.000000	0.25
China Electronics Corporation (CEC), China	1.000000	0.08
Ningbo ANN Semiconductor Co., Ltd., China	1.000000	0.08
Institute of Semiconductors (IOS), CAS, China	1.000000	0.08

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