Avalanche durability of high-voltage GaN p–n diodes with tunnel junctions as anode contacts

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0300544
Affiliations:
3
Authors:
5
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Institutions Authors Share
Nagoya University, Japan
2.000000
 0.40
Meijo University, Japan
2.000000
 0.40
Toyota Central Research and Development Laboratories, Inc., Japan
1.000000
 0.20
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