Thin Ga2O3 insertion layer for phase structure and electrical property evolutions in ferroelectric Hf0.5Zr0.5O2 capacitors

Journal:

Applied Physics Letters

Published:

2025-12-29

DOI:

10.1063/5.0301196

Affiliations:

6

Authors:

10

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Institutions	Authors	Share
The Hong Kong Polytechnic University (PolyU), China	2.000000	0.20
Fudan University, China	2.000000	0.20
National Integrated Circuit Innovation Center (NICIC), China	2.000000	0.20
Jiashan Fudan Institute, China	2.000000	0.20
China Electronics Technology Group Corporation (CETC), China	1.000000	0.10
Peking University (PKU), China	1.000000	0.10

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