Universal role of dopant-VGa complexes induced carrier suppression in Si/Ge/Sn/Zr-doped β-Ga2O3

Journal:

Applied Physics Letters

Published:

2026-01-19

DOI:

10.1063/5.0301321

Affiliations:

8

Authors:

16

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Institutions	Authors	Share
Wuhan University (WHU), China	4.000000	0.25
Institute of Technological Sciences, WHU, China	4.000000	0.25
Hubei Jiufengshan Laboratory, China	3.500000	0.22
Xiamen University (XMU), China	2.000000	0.13
Wuhan National Laboratory for Optoelectronics (WNLO), HUST, China	1.500000	0.09
University of Cambridge, United Kingdom (UK)	1.000000	0.06

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