Type-I band offset between diamond and n-type Al Ga oxynitride: Possible diamond-based heterojunction for high-power and high-frequency electronic devices

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0301443
Affiliations:
4
Authors:
7
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Institutions Authors Share
Waseda University, Japan
4.666667
 0.67
Tohoku University, Japan
2.000000
 0.29
Power Diamond Systems, Japan
0.333333
 0.05
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