2.3-kV 𝛃 -Ga2O3 heterojunction barrier Schottky diode with Cu anode and robust thermal reliability
- Journal:
- Applied Physics Letters
- Published:
- DOI:
- 10.1063/5.0301627
- Affiliations:
- 4
- Authors:
- 9
| Institutions | Authors | Share |
|---|---|---|
| Southern University of Science and Technology (SUSTech), China | 0.78 | |
| The University of Hong Kong (HKU), China | 0.11 | |
| Peng Cheng Laboratory (PCL), China | 0.06 | |
| Shenzhen Polytechnic University (SZPU), China | 0.06 |