Investigation on the mechanism of stability variation with gate–drain bias in AlGaN/GaN-on-Si HEMTs

Journal:

Applied Physics Letters

Published:

2026-01-05

DOI:

10.1063/5.0302183

Affiliations:

1

Authors:

14

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Institutions	Authors	Share
Xidian University, China	14.000000 14.000000	1.00

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