Engineering neuromorphic phase-change memory: Carbon-doped GeSbTe with high thermal stability and low resistance drift

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0303105
Affiliations:
4
Authors:
11
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Institutions Authors Share
Wuhan National Laboratory for Optoelectronics (WNLO), HUST, China
8.000000
 0.73
The University of Hong Kong (HKU), China
1.000000
 0.09
Fudan University, China
1.000000
 0.09
Ames National Laboratory, United States of America (USA)
1.000000
 0.09
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