Engineering neuromorphic phase-change memory: Carbon-doped GeSbTe with high thermal stability and low resistance drift
- Journal:
- Applied Physics Letters
- Published:
- DOI:
- 10.1063/5.0303105
- Affiliations:
- 4
- Authors:
- 11
| Institutions | Authors | Share |
|---|---|---|
| Wuhan National Laboratory for Optoelectronics (WNLO), HUST, China | 0.73 | |
| The University of Hong Kong (HKU), China | 0.09 | |
| Fudan University, China | 0.09 | |
| Ames National Laboratory, United States of America (USA) | 0.09 |