Temperature-dependent wake-up phenomena in AlScN ferrodiode memory devices

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0303160
Affiliations:
2
Authors:
8
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Institutions Authors Share
University of Pennsylvania (Penn), United States of America (USA)
5.000000
 0.63
USAF Air Force Research Laboratory (AFRL), United States of America (USA)
3.000000
 0.38
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